Toshiba
Condition: Used
Warranty: 7-Day Warranty
OEM: Toshiba
Powers On: Unable to Check
Functional Condition: Used
Cosmetic Condition: Good
SKU#: G-BBDF5-54D
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Description
The Toshiba MG50H1BS1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) power module designed for industrial applications requiring efficient power conversion. It features a 500V blocking voltage and a 50A continuous collector current, making it suitable for use in various power electronic systems.
Specifications
Model: MG50H1BS1
Type: IGBT Power Module
Configuration: Independent
Collector-Emitter Voltage (V_CEO): 500V
Continuous Collector Current (I_C): 50A
Package Type: Module
Mounting Style: Screw Mount
Weight: Approximately 0.5 kg
Country of Manufacture: Japan
Certifications: RoHS compliant
Features
Designed for high-efficiency power conversion in industrial applications
Independent configuration allows for flexible integration into various systems
500V blocking voltage suitable for a wide range of power electronic circuits
50A continuous collector current capability ensures reliable operation under load
RoHS compliant, ensuring environmental safety
Need This Product Certified Patient-Ready?
If you require this product to be patient-ready certified, you can request a quote. Inspection, testing, repair, electrical safety testing, and calibration services are available through A Biomedical Service, Inc.
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